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MAGIX.Products.MultiKeygen-CORE.rar [Updated] 2022




MAGIX.Products.MultiKeygen-CORE.rar MAGIX.Products.MultiKeygen-CORE.rar 4.75 MB Download You have made a free choice and download!This video is from: 00:00 to 00:10 00:16 to 00:23 00:30 to 00:38 01:07 to 01:16 01:17 to 01:27 Download MAGIX.Products.MultiKeygen-CORE.rar From FilesJet MAGIX.Products.MultiKeygen-CORE.rar | 1417 kB/sMagix.Products.MultiKeygen-CORE.rar Download MAGIX.Products.MultiKeygen-CORE.rar freeThis invention relates generally to electrostatic discharge (ESD) protection in integrated circuits, and more specifically to the use of a parasitic MOS transistor in the input stage of an integrated circuit to prevent ESD damage. The advent of MOS integrated circuits has significantly increased the importance of reliable ESD protection schemes. ESD damage has been a common occurrence in the development of these devices. The development of reliable ESD protection schemes has been largely ineffective because the integrated circuit is often destroyed by the ESD even though the device may be operating at relatively low voltages. Prior art ESD protection schemes typically rely on the use of a parasitic bipolar transistor connected to the substrate of the device. This transistor is biased by a relatively high voltage, such as the drain of the transistors in the integrated circuit, in order to cause it to turn on and conduct the ESD current. The first problem with this approach is that the current passing through the bipolar transistor can cause a large amount of substrate current to flow in the MOS transistors in the integrated circuit. The substrate current is a parasitic current that flows through the transistors in the integrated circuit. This substrate current can cause the transistors to latchup, or self-destruct. The second problem with this approach is that the size of the bipolar transistor must be large enough to conduct the full ESD current. However, larger transistors consume more power. Consequently, these larger transistors cannot be used at the low voltages at which the integrated circuit is operating. Therefore, it would be desirable to provide an ESD protection scheme which does not require the use of a parasitic bipolar transistor to conduct ESD current and yet can be used with integrated circuits which are designed to operate at low voltages. In



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